PHD97NQ03LT MOSFET Transistor

The PHD97NQ03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD97NQ03LT transistor as follows.

PHD97NQ03LT Transistor Specification

Transistor Code		PHD97NQ03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0063Ohm
Power Dissipation (Maximum)	PD	107W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.15V

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