NID6002N MOSFET Transistor

The NID6002N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NID6002N transistor as follows.

NID6002N Transistor Specification

Transistor Code		NID6002N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	65V
Gate-Source Voltage (Maximum)	VGS	14V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.21Ohm
Power Dissipation (Maximum)	PD	2.5W

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