PHB66NQ03LT MOSFET Transistor

The PHB66NQ03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB66NQ03LT transistor as follows.

PHB66NQ03LT Transistor Specification

Transistor Code		PHB66NQ03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	66A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0105Ohm
Power Dissipation (Maximum)	PD	93W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2V

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