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STB13NM60N MOSFET Transistor

The STB13NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB13NM60N transistor as follows.

Circuit diagram symbol of the STB13NM60N transistor

STB13NM60N Transistor Specification

Transistor Code STB13NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.36Ohm
Power Dissipation (Maximum) PD 90W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 30nC

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