P9006EDG MOSFET Transistor

The P9006EDG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P9006EDG transistor as follows.

P9006EDG Transistor Specification

Transistor Code		P9006EDG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	41W
Drain-Source Capacitance		122pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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