P5504EDG MOSFET Transistor

The P5504EDG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P5504EDG transistor as follows.

P5504EDG Transistor Specification

Transistor Code		P5504EDG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	41W
Drain-Source Capacitance		198pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.7nS

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