P2610BT MOSFET Transistor

The P2610BT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2610BT transistor as follows.

P2610BT Transistor Specification

Transistor Code		P2610BT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0268Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		148pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS

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