MXP1008AT MOSFET Transistor

The MXP1008AT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MXP1008AT transistor as follows.

MXP1008AT Transistor Specification

Transistor Code		MXP1008AT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	242W
Drain-Source Capacitance		536pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		130nS

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