P1060AT MOSFET Transistor

The P1060AT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1060AT transistor as follows.

P1060AT Transistor Specification

Transistor Code		P1060AT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS

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