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IXTP14N60PM MOSFET Transistor

The IXTP14N60PM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP14N60PM transistor as follows.

Circuit diagram symbol of the IXTP14N60PM transistor

IXTP14N60PM Transistor Specification

Transistor Code IXTP14N60PM
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.55Ohm
Power Dissipation (Maximum) PD 75W
Operating Junction Temperature (Maximum) 150°C
Rise Time 500nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 36nC

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