NVD5890N MOSFET Transistor

The NVD5890N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5890N transistor as follows.

NVD5890N Transistor Specification

Transistor Code		NVD5890N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK4
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	123A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0037Ohm
Power Dissipation (Maximum)	PD	107W
Total Gate Charge		74nC

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