NVD5803N MOSFET Transistor

The NVD5803N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVD5803N transistor as follows.

NVD5803N Transistor Specification

Transistor Code		NVD5803N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK4
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	85A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0057Ohm
Power Dissipation (Maximum)	PD	83W
Total Gate Charge		51nC

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