STD110NH02LT4 MOSFET Transistor

The STD110NH02LT4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD110NH02LT4 transistor as follows.

STD110NH02LT4 Transistor Specification

Transistor Code		STD110NH02LT4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		D110NH02L
Drain-Source Voltage (Maximum)	VDS	24V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		1126pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		224nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		69nC

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