MTP1013S3 MOSFET Transistor

The MTP1013S3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP1013S3 transistor as follows.

MTP1013S3 Transistor Specification

Transistor Code		MTP1013S3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-323
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.54A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.64Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		21pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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