MTEA0N10J3 MOSFET Transistor

The MTEA0N10J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTEA0N10J3 transistor as follows.

MTEA0N10J3 Transistor Specification

Transistor Code		MTEA0N10J3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.083Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		54pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		15nS

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