QM6007D MOSFET Transistor

The QM6007D is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6007D transistor as follows.

QM6007D Transistor Specification

Transistor Code		QM6007D
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	20.8W
Drain-Source Capacitance		59pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.4nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4.59nC

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