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MTDN3018S6R MOSFET Transistor

The MTDN3018S6R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTDN3018S6R transistor as follows.

Circuit diagram symbol of the MTDN3018S6R transistor

MTDN3018S6R Transistor Specification

Transistor Code MTDN3018S6R
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-363R
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.115A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 0.3W
Drain-Source Capacitance 9.3pF
Operating Junction Temperature (Maximum) 150°C

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