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BSS84S6R MOSFET Transistor

The BSS84S6R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSS84S6R transistor as follows.

Circuit diagram symbol of the BSS84S6R transistor

BSS84S6R Transistor Specification

Transistor Code BSS84S6R
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-363R
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.17A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 0.3W
Drain-Source Capacitance 4.6pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3.3nS

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