MTA65N20H8 MOSFET Transistor

The MTA65N20H8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTA65N20H8 transistor as follows.

MTA65N20H8 Transistor Specification

Transistor Code		MTA65N20H8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.074Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		161pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		50nS
Total Gate Charge		60nC

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