MTB1D7N03ATH8 MOSFET Transistor

The MTB1D7N03ATH8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB1D7N03ATH8 transistor as follows.

MTB1D7N03ATH8 Transistor Specification

Transistor Code		MTB1D7N03ATH8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0015Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		935pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Total Gate Charge		53nC

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