MMN8220 MOSFET Transistor

The MMN8220 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMN8220 transistor as follows.

MMN8220 Transistor Specification

Transistor Code		MMN8220
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		51.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.242nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		1.26nC

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