FTD2011 MOSFET Transistor

The FTD2011 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTD2011 transistor as follows.

FTD2011 Transistor Specification

Transistor Code		FTD2011
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Transistor SMD Code		2011
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Total Gate Charge		32nC

UXPython is not the creator or an official representative of the FTD2011 MOSFET transistor. You can download the official FTD2011 MOSFET transistor datasheet to get more infromation about this transistor.

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