MDS5652URH MOSFET Transistor

The MDS5652URH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDS5652URH transistor as follows.

MDS5652URH Transistor Specification

Transistor Code		MDS5652URH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		154pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24.6nS
Gate-Threshold Voltage (Maximum)		3V

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