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ALD1101BSAL MOSFET Transistor

The ALD1101BSAL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1101BSAL transistor as follows.

Circuit diagram symbol of the ALD1101BSAL transistor

ALD1101BSAL Transistor Specification

Transistor Code ALD1101BSAL
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOIC-8
Drain-Source Voltage (Maximum) VDS 10V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 0.04A
Drain-Source On-State Resistance (Maximum) RDS(on) 75Ohm
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 70°C
Gate-Threshold Voltage (Maximum) 1V

ALD1101BSAL MOSFET Transistor Overview

The ALD1101BSAL is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOIC-8 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the ALD1101BSAL MOSFET

Followings are the key electrical characteristics of the ALD1101BSAL MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in ALD1101BSAL MOSFET transistor is 10V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the ALD1101BSAL MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the ALD1101BSAL MOSFET transistor is 0.04A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of ALD1101BSAL MOSFET transistor when the transistor is fully turned on is 75 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the ALD1101BSAL MOSFET transistor can comfortably transfer into heat without breaking is 0.5W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the ALD1101BSAL MOSFET transistor is switched on is . This is the rate at which ALD1101BSAL MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the ALD1101BSAL MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of ALD1101BSAL MOSFET transistor can be safely operated at the 70°C without damaging the transistor.

UXPython is not the creator or an official representative of the ALD1101BSAL MOSFET transistor. You can download the official ALD1101BSAL MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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