G20N20 MOSFET Transistor

The G20N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G20N20 transistor as follows.

G20N20 Transistor Specification

Transistor Code		G20N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		163pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS

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