IXTX210P10T MOSFET Transistor

The IXTX210P10T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTX210P10T transistor as follows.

IXTX210P10T Transistor Specification

Transistor Code		IXTX210P10T
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	210A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	1040W
Drain-Source Capacitance		4070pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		740nC

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