IXFX62N25 MOSFET Transistor

The IXFX62N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX62N25 transistor as follows.

IXFX62N25 Transistor Specification

Transistor Code		IXFX62N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	62A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	417W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		240nC

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