IXTT110N10L2 MOSFET Transistor

The IXTT110N10L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT110N10L2 transistor as follows.

IXTT110N10L2 Transistor Specification

Transistor Code		IXTT110N10L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	600W
Operating Junction Temperature (Maximum)		150°C
Rise Time		230nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		260nC

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