IXTQ130N10T MOSFET Transistor

The IXTQ130N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ130N10T transistor as follows.

IXTQ130N10T Transistor Specification

Transistor Code		IXTQ130N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0091Ohm
Power Dissipation (Maximum)	PD	360W
Operating Junction Temperature (Maximum)		175°C
Rise Time		67nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		104nC

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