SSH10N60A MOSFET Transistor

The SSH10N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSH10N60A transistor as follows.

SSH10N60A Transistor Specification

Transistor Code		SSH10N60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	193W
Drain-Source Capacitance		1750pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		74nC

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