IXTP60N10TM MOSFET Transistor

The IXTP60N10TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP60N10TM transistor as follows.

IXTP60N10TM Transistor Specification

Transistor Code		IXTP60N10TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	60W
Rise Time		59nS
Total Gate Charge		49nC

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