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IXTH180N10T MOSFET Transistor

The IXTH180N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH180N10T transistor as follows.

Circuit diagram symbol of the IXTH180N10T transistor

IXTH180N10T Transistor Specification

Transistor Code IXTH180N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 180A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0064Ohm
Power Dissipation (Maximum) PD 480W
Operating Junction Temperature (Maximum) 175°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 151nC

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