IXFX170N20T MOSFET Transistor

The IXFX170N20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFX170N20T transistor as follows.

IXFX170N20T Transistor Specification

Transistor Code		IXFX170N20T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS247
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	170A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	1150W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		265nC

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