IXFT66N20Q MOSFET Transistor

The IXFT66N20Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT66N20Q transistor as follows.

IXFT66N20Q Transistor Specification

Transistor Code		IXFT66N20Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	66A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	400W
Rise Time		200nS
Total Gate Charge		105nC

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