IXFT120N25T MOSFET Transistor

The IXFT120N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT120N25T transistor as follows.

IXFT120N25T Transistor Specification

Transistor Code		IXFT120N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-268
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	890W
Drain-Source Capacitance		1025pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		180nC

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