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IXFT20N80Q MOSFET Transistor

The IXFT20N80Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT20N80Q transistor as follows.

Circuit diagram symbol of the IXFT20N80Q transistor

IXFT20N80Q Transistor Specification

Transistor Code IXFT20N80Q
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.42Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 150nC

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