IXFT13N100 MOSFET Transistor

The IXFT13N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT13N100 transistor as follows.

IXFT13N100 Transistor Specification

Transistor Code		IXFT13N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	298W
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		122nC

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