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IXFT140N10P MOSFET Transistor

The IXFT140N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT140N10P transistor as follows.

Circuit diagram symbol of the IXFT140N10P transistor

IXFT140N10P Transistor Specification

Transistor Code IXFT140N10P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO268
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 140A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 600W
Operating Junction Temperature (Maximum) 175°C
Rise Time 150nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 155nC

IXFT140N10P MOSFET Transistor Overview

The IXFT140N10P is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO268 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IXFT140N10P MOSFET

Followings are the key electrical characteristics of the IXFT140N10P MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IXFT140N10P MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IXFT140N10P MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IXFT140N10P MOSFET transistor is 140A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IXFT140N10P MOSFET transistor when the transistor is fully turned on is 0.011 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IXFT140N10P MOSFET transistor can comfortably transfer into heat without breaking is 600W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IXFT140N10P MOSFET transistor is switched on is 150nS. This is the rate at which IXFT140N10P MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IXFT140N10P MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IXFT140N10P MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the IXFT140N10P MOSFET transistor. You can download the official IXFT140N10P MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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