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IRFU3410PBF MOSFET Transistor

The IRFU3410PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFU3410PBF transistor as follows.

Circuit diagram symbol of the IRFU3410PBF transistor

IRFU3410PBF Transistor Specification

Transistor Code IRFU3410PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 31A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.039Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 37nC

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