IPS65R1K0CE MOSFET Transistor

The IPS65R1K0CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS65R1K0CE transistor as follows.

IPS65R1K0CE Transistor Specification

Transistor Code		IPS65R1K0CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		65CE1K0
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	37W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.2nS
Gate-Threshold Voltage (Maximum)		3.5V

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