IRFSL5620PBF MOSFET Transistor

The IRFSL5620PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL5620PBF transistor as follows.

IRFSL5620PBF Transistor Specification

Transistor Code		IRFSL5620PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0775Ohm
Power Dissipation (Maximum)	PD	144W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14.6nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		25nC

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