IRFSL4310PBF MOSFET Transistor

The IRFSL4310PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL4310PBF transistor as follows.

IRFSL4310PBF Transistor Specification

Transistor Code		IRFSL4310PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		540pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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