HFI640 MOSFET Transistor

The HFI640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFI640 transistor as follows.

HFI640 Transistor Specification

Transistor Code		HFI640
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	139W
Drain-Source Capacitance		175pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		37nC

UXPython is not the creator or an official representative of the HFI640 MOSFET transistor. You can download the official HFI640 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRFSL4510PBF MOSFET Transistor SIHFBC30L MOSFET Transistor IPI80N06S3-07 MOSFET Transistor IRF3704L MOSFET Transistor IPI14N03LA MOSFET Transistor IRFSL4310ZPBF MOSFET Transistor IRF2807ZLPBF MOSFET Transistor IRFSL7734PBF MOSFET Transistor IRF3709LPBF MOSFET Transistor IRF1324LPBF MOSFET Transistor IRF9Z34L MOSFET Transistor AOW15S60 MOSFET Transistor WFJ8N65B MOSFET Transistor IRFSL7534PBF MOSFET Transistor IRFSL4410PBF MOSFET Transistor AOW15S65 MOSFET Transistor MSU8N50Q MOSFET Transistor CS6N80ARH MOSFET Transistor IRFSL38N20DPBF MOSFET Transistor AOW7S60 MOSFET Transistor