IRFS31N20DPBF MOSFET Transistor

The IRFS31N20DPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS31N20DPBF transistor as follows.

IRFS31N20DPBF Transistor Specification

Transistor Code		IRFS31N20DPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.082Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		70nC

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