SIHB12N60E MOSFET Transistor

The SIHB12N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHB12N60E transistor as follows.

SIHB12N60E Transistor Specification

Transistor Code		SIHB12N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	147W
Drain-Source Capacitance		53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		29nC

UXPython is not the creator or an official representative of the SIHB12N60E MOSFET transistor. You can download the official SIHB12N60E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

SIHB15N65E MOSFET Transistor IRF3711ZSPBF MOSFET Transistor IRF9Z34SPBF MOSFET Transistor IRFZ44VZSPBF MOSFET Transistor AP9560GS-HF MOSFET Transistor IRF3707S MOSFET Transistor SSM90T03GS MOSFET Transistor SQM110N05-06L MOSFET Transistor IRFZ44NSPBF MOSFET Transistor SIHF720S MOSFET Transistor IRFS3806PBF MOSFET Transistor IRF640SPBF MOSFET Transistor IXTA3N120HV MOSFET Transistor SIHF9540S MOSFET Transistor AOB10T60P MOSFET Transistor IRF1404SPBF MOSFET Transistor KDB2552 MOSFET Transistor IRFS4321PBF MOSFET Transistor RU190N10S MOSFET Transistor SIHF710S MOSFET Transistor