PJD8NA50 MOSFET Transistor

The PJD8NA50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJD8NA50 transistor as follows.

PJD8NA50 Transistor Specification

Transistor Code		PJD8NA50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Transistor SMD Code		D8NA50
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		114pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V

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