IRFP27N60K MOSFET Transistor

The IRFP27N60K is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP27N60K transistor as follows.

IRFP27N60K Transistor Specification

Transistor Code		IRFP27N60K
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	500W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		180nC

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