IRFP4232PBF MOSFET Transistor

The IRFP4232PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP4232PBF transistor as follows.

IRFP4232PBF Transistor Specification

Transistor Code		IRFP4232PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0357Ohm
Power Dissipation (Maximum)	PD	430W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		240nC

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