IRFL214PBF MOSFET Transistor

The IRFL214PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFL214PBF transistor as follows.

IRFL214PBF Transistor Specification

Transistor Code		IRFL214PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Transistor SMD Code		FL214
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.79A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		42pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.6nS
Gate-Threshold Voltage (Maximum)		4V

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