ZXMS6006DG MOSFET Transistor

The ZXMS6006DG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMS6006DG transistor as follows.

ZXMS6006DG Transistor Specification

Transistor Code		ZXMS6006DG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	3W
Operating Junction Temperature (Maximum)		150°C

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